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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.0 8.9 Single
D
FEATURES
600 4.4
* * * * * * * *
Surface Mount (IRFBC20S/SiHFBC20S) Low-Profile Through-Hole (IRFBC20L/SiHFBC20L) Available in Tape and Reel (IRFBC20S/SiHFBC20S) Dynamic dV/dt Rating 150 C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC20L/SiHFBC20L) is a available for low-profile applications.
I2PAK
(TO-262)
D2PAK
(TO-263)
G G D S S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRFBC20SPbF SiHFBC20S-E3 IRFBC20S SiHFBC20S D2PAK (TO-263) IRFBC20STRLPbFa SiHFBC20STL-E3a IRFBC20STRLa SiHFBC20STLa I2PAK (TO-262) IRFBC20LPbF SiHFBC20L-E3 IRFBC20L SiHFBC20L
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e TA = 25 C TC = 25 C Currenta, e VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt LIMIT 600 20 2.2 1.4 8.0 0.40 84 2.2 5.0 3.1 50 3.0 - 55 to + 150 300d UNIT V
A W/C mJ A mJ W V/ns C
Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 31 mH, RG = 25 , IAS = 2.2 A (see fig. 12). c. ISD 2.2 A, dI/dt 40 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Uses IRFBC20/SiHFBC20 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91107 S-Pending-Rev. A, 03-Jun-08
WORK-IN-PROGRESS
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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient (PCB Mounted, steady-state)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 2.5 UNIT C/W
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LS
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mAc VDS = VGS, ID = 250 A VGS = 20 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 1.3 Ab VDS = 50 V, ID = 1.3 Ac
600 2.0 1.4
0.88 -
4.0 100 100 500 4.4 -
V V/C V nA A S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c
-
350 48 8.6 10 23 30 25 7.5
18 3.0 8.9 nH ns nC pF
VGS = 10 V
ID = 2.0 A, VDS = 360 V, see fig. 6 and 13b, c
-
VDD = 300 V, ID = 2.0 A, RG = 18 , RD = 150 , see fig. 10b, c
-
Between lead, and center of die contact
-
-
290 0.67
2.2 A 8.0 1.6 580 1.3 V ns C
G
S
TJ = 25 C, IS = 2.2 A, VGS = 0 Vb TJ = 25 C, IF = 2.0 A, dI/dt = 100 A/sb, c
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Uses IRFBC20/SiHFBC20 data and test conditions.
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Document Number: 91107 S-Pending-Rev. A, 03-Jun-08
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91107 S-Pending-Rev. A, 03-Jun-08
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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91107 S-Pending-Rev. A, 03-Jun-08
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
RD
VDS VGS RG
D.U.T. + - VDD
10 V
Pulse width 1 s Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
10 % VGS td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L Vary tp to obtain required IAS RG VDS tp D.U.T. I AS 10 V tp 0.01 IAS VDD + V DD VDS VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91107 S-Pending-Rev. A, 03-Jun-08
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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
50 k 12 V 0.2 F 0.3 F
10 V QGS
QG
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91107 S-Pending-Rev. A, 03-Jun-08
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91107.
Document Number: 91107 S-Pending-Rev. A, 03-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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